Characterization of the Buried Channel n-MOST Source Followers in CMOS Image Sensors

نویسندگان

  • Xinyang Wang
  • Padmakumar R. Rao
  • Albert J.P. Theuwissen
چکیده

The performance of CMOS image sensors in a deep sub-micron CMOS process is limited by two factors: 1) The increasing pixel temporal noise floor dominated by the 1/f noise from the pixel source follower (SF) and 2) The decreasing pixel analog swing due to the supply voltage scaling. In this paper, we present the possibility of using a buried channel n-MOST as the in-pixel source follower to reduce noise and enhance the pixel analog swing.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Performance of buried channel n-type MOSFETs in 0.18-μm CMOS image sensor process

Buried channel (BC) MOSFETs are known to have better noise performance than surface channel (SC) MOSFETs when used as source followers in modern Charge Coupled Devices (CCD). CMOS image sensors find increasing range of applications and compete with CCDs in high performance imaging, however BC transistors are rarely used in CMOS. As a part of the development of charge storage using BC CCDs in CM...

متن کامل

New Method for Analysis of image sensor to produce and evaluate the image

In this paper, a new method for evaluating CMOS image sensors based on computer modeling and analysis is introduced. Image sensors are composed of different parts, each of which has a specific effect on image quality. Circuits of image sensors can be evaluated and analyzed using circuit simulators or theoretically, but these methods cannot help to produce the final image. In order to produce th...

متن کامل

Characterization of In-Pixel Buried-Channel Source Follower with Optimized Row Selector in CMOS Image Sensors

⎯ This paper presents a CMOS image sensor with pinned-photodiode 5T active pixels which use inpixel buried channel source follower (BSF) and optimized row selector (RS). According to our previous work [1], using in-pixel BSFs can achieve significant pixel dark random noise reduction, specially for inpixel random telegraph signal (RTS) noise, but due to the positively-shifted threshold voltage o...

متن کامل

Neural Monitoring With CMOS Image Sensors

Implantable image sensors have several biomedical applications due to their miniature size, light weight, and low power consumption achieved through sub-micron standard CMOS (Complementary Metal Oxide Semiconductor) technologies. The main applications are in specific cell labeling, neural activity detection, and biomedical imaging. In this paper the recent research studies on implantable CMOS i...

متن کامل

Design and Characterization of Submicron CCDs in CMOS

Abstract Three types of submicron CCDs are implemented in singlepoly 0.11μm CMOS technology to demonstrate the feasibility of multi-aperture imaging systems that produce data from distributed arrays of CCDs integrated across a monolithic substrate. Test structures comprising 16 × 16 pixel FrameTransfer (FT)-CCDs with 0.5 − 0.7μm pixels are fabricated under various process conditions to implemen...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2007